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gate capacitance

См. также в других словарях:

  • Gate dielectric — A gate dielectric is a dielectric used between the gate and substrate of a field effect transistor. In state of the art processes, the gate dielectric is subject to many constraints, including:* Electrically clean interface to the substrate (low… …   Wikipedia

  • Metal gate — A metal gate, in the context of a lateral Metal Oxide Semiconductor MOS stack, is just that the gate material is made from a metal. For decades, the industry had moved away from metal as the gate material in the MOS stack due to fabrication… …   Wikipedia

  • Logic gate — A logic gate is an idealized or physical device implementing a Boolean function, that is, it performs a logical operation on one or more logic inputs and produces a single logic output. Depending on the context, the term may refer to an ideal… …   Wikipedia

  • MOSFET — Two power MOSFETs in the surface mount package D2PAK. Operating as switches, each of these components can sustain a blocking voltage of 120 volts in the OFF state, and can conduct a continuous current of 30 amperes in the ON state, dissipating up …   Wikipedia

  • High-k dielectric — The term high κ dielectric refers to a material with a high dielectric constant (κ) (as compared to silicon dioxide) used in semiconductor manufacturing processes which replaces the silicon dioxide gate dielectric. The implementation of high κ… …   Wikipedia

  • Dynamic voltage scaling — is a power management technique in computer architecture, where the voltage used in a component is increased or decreased, depending upon circumstances. Dynamic voltage scaling to increase voltage is known as overvolting; dynamic voltage scaling… …   Wikipedia

  • FO4 — Fan out of 4 is a concept in electronics referring to the gate capacitance between two consecutive stages. In recent CMOS processes, it is generally the case that the minimum delay in an inverter chain occurs when each succeeding inverter has a… …   Wikipedia

  • Nanofluidic circuitry — is a nanotechnology aiming for control of fluids in nanometer scale. Due to the effect of an electrical double layer within the fluid channel, the behavior of nanofluid is observed to be significantly different compared with its microfluidic… …   Wikipedia

  • Ring oscillator — A ring oscillator is a device composed of an odd number of NOT gates whose output oscillates between two voltage levels, representing true and false . The NOT gates, or inverters, are attached in a chain; the output of the last inverter is fed… …   Wikipedia

  • Carrier scattering — Defect types include atom vacancies, adatoms, steps, and kinks which occur most frequently at surfaces due to finite material size causing crystal discontinuity. What all types of defects have in common, whether they be surface or bulk, is that… …   Wikipedia

  • Power MOSFET — A Power MOSFET is a specific type of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) designed to handle large power. Compared to the other power semiconductor devices (IGBT, Thyristor...), its main advantages are high commutation speed …   Wikipedia

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